Why Igbt Overvoltage Breakdown In Frequency Converters Cannot Be Ignored

The Insulated Gate Bipolar Transistor (IGBT) in frequency converter 60hz to 50hz single phase plays the role of voltage conversion and high-frequency switching in power electronic systems, and its operating state is directly related to the stability and lifespan of the drive system. The collector-emitter junction of the IGBT withstands extremely high voltages. When this voltage exceeds the device's withstand voltage limit, breakdown occurs, damaging the internal structure of the module and potentially causing overall failure or even shutdown.

frequency converter 50hz to 60hz single phase During operation, transient spikes generated during switching, grid voltage fluctuations, and load changes can all cause instantaneous high voltage impacts on IGBTs. These surge voltages often exceed the IGBT's avalanche voltage or repetitive energy tolerance, leading to breakdown failure. Once damaged, the IGBT's internal PNPN structure may enter an uncontrolled amplification region, resulting in a sharp increase in device losses and even failure.